ji , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BUX41 high current npn silicon transistor description the BUX41 is a silicon multiepitaxial planar npn transistor in jedec to-3 metal case, intended for use in switching and linear applications in military and industrial equipment. absolute maximum ratings symbol vcbo vcex vceo vebo ic i cm ib ptot tstg t, parameter collector-base voltage (!e = 0) collector-emitter voltage (vbe = - 1.5v) collector-emitter voltage (ib = 0) emitter-base voltage (ic = 0) collector current collector peak current (tp = 10 ms) base current total power dissipation at tcase < 25 c storage temperature max operating junction temperature value 250 250 200 7 15 20 3 120 -65 to 200 200 unit v v v v a a a w c c u-.875 -j i max. n .525 r max. quality semi-conductors
thermal data rthj-c thermal resistance junction-case max 1.46 c/w electrical characteristics (tcase = 25 c unless otherwise specified) symbol iceo icex iebo vceo(sus)* vebo vce(sat)* vbe(sat)* hfe* is/b it ton ts tf parameter collector cut-off current (la = 0) collector cut-off current emitter cut-off current (ic- 0) collector-emitter sustaining voltage emitter-base voltage (lc = 0) collector-emitter saturation voltage base-emitter saturation voltage dc current gain second breakdown collector current transistor frequency turn-on time storage time fall time clamped es/o collector current test conditions vce = 160 v vce = 250 v vbe = -15v tease = 125 c vce= 250 v vbe = -1.5v veb = 5 v ic = 200 ma ie = 50 ma ic = 5 a ib * 0.5 a ic = 8 a ib = 1 a ic = 8 a la = 1 a ic = 5 a vce = 4 v ic = 8 a vce = 4 v vce = 30 v t = 1 s vce = 135 v t = 1 s vce = 15 v ic = 1 a f = 10 mhz lc = 8 a ib1 = 1 a vcc = 150 v ic = 8 a ibi = 1 a ibz = - 1 a vcc = 150v volamp= 200 v l = 500 ph min. 200 7 15 8 4 0.15 8 8 typ. 0.38 0.6 1.35 0.28 1.2 0.25 max. 1 1 5 1 1.2 1.6 2 45 1 1.7 0.8 unit ma ma ma ma v v v v v a a mhz jis |ils us ^ a * pulsed: pulse duration = 300ns, duty cycle < 2 %
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